digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 T2800 series bidirectional triode thyristors available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol value unit repetitive peak off-stage voltage (1) (t j = -40 to +100c, gate open) T2800b T2800c T2800d T2800e T2800m v drm 200 300 400 500 600 volts rms on-state current (conduction angle = 360, t c = 80c) i t(rms) 8 amps peak non-repetitive surge current (one cycle, 60hz, t j = 80c) i tsm 100 amps circuit fusing considerations (t j = -40 to +100c, t = 1.25 to 10ms) i 2 t 50 a 2 s peak gate power (pulse width = 1.0s) p gm 16 watts average gate power p g(av) 0.35 watts peak gate trigger current (pulse width = 1.0s) i gm 4 amps operating junction temperature range t j -40 to +100 c storage temperature range t stg -40 to +150 c note 1: ratings apply for open gate conditions. thyristor device s shall not be tested with a co nstant current source for blocki ng capability such that the voltage applied exceeds the rated blocking voltage. thermal characteristics characteristics symbol max unit thermal resistance, junction to case r ? jc 2.2 c/w electrical characteristics (t c = 25c, either polarity of mt2 to mt1 voltage unless otherwise noted) characteristic symbol min typ max unit peak off state current (rated v drm @ t c = 100c, gate open) i drm - - 2 ma peak on-state voltage (i tm = 30a peak) v tm - 1.7 2 volts dc gate trigger current (continuous dc) (v d = 12v, r l = 12 ? ) mt2(+), g(+) mt2(+), g(-) mt2(-), g(-) mt2(-), g(+) i gt - - - - 10 20 15 30 25 60 25 60 ma dc gate trigger voltage (continuous dc) all polarities (v d = 12v, r l = 100 ? ) (v d = v drm , r l = 125 ? , t c = 100c) v gt - 0.2 1.25 - 2.5 - volts holding current (either direction) (v d = 12v, gate open, i t = 125ma) i h - 15 30 ma gate controlled turn on time (v d = rated v drm , i t = 10a, i gt = 80ma, rise time = 0.1s) t gt - 1.6 - s critical rate of rise of commutating voltage (rated v drm , i t(rms) = 8a, commutating di/dt = 4.3a/ms, gate unenergized, t c = 80c) dv/dt(c) - 10 - v/s sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130206
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 T2800 series bidirectional triode thyristors characteristic symbol min typ max unit critical rate of rise of off-state voltage (rated v drm , exponential voltage rise, gate open, t c = 100c) T2800b T2800c T2800d T2800e T2800m dv/dt 100 85 75 65 60 - - - - - - - - - - v/s mechanical characteristics case to-220ab marking alpha-numeric pin out see below sales@digitroncorp.com to-220ab inches millimeters min max min max a 0.575 0.620 14.600 15.750 b 0.380 0.405 9.650 10.290 c 0.160 0.190 4.060 4.820 d 0.025 0.035 0.640 0.890 f 0.142 0.147 3.610 3.730 g 0.095 0.105 2.410 2.670 h 0.110 0.155 2.790 3.930 j 0.014 0.022 0.360 0.560 k 0.500 0.562 12.700 14.270 l 0.045 0.055 1.140 1.390 n 0.190 0.210 4.830 5.330 q 0.100 0.120 2.540 3.040 r 0.080 0.110 2.040 2.790 s 0.045 0.055 1.140 1.390 t 0.235 0.255 5.970 6.480 u - 0.050 - 1.270 v 0.045 - 1.140 - z - 0.080 - 2.030 fax +1.908.245-0555 www.digitroncorp.com rev. 20130206
|
